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80307 - Physics (2015/2016) Stampa

Course syllabus

Only for the METHODOLOGICAL curriculum

Experimental method, fundamental physical quantities and their units in the International System (SI),
dimensional analysis.
Reference systems. Vectors and their addition. Components of a vector along the axes of a threedimensional
Cartesian orthogonal reference system. Scalar product and vector product of vectors.
Particle kinematics: position, displacement, velocity, acceleration vectors. Radial and tangential
acceleration. Motion with constant acceleration, circular motion. Relative motions.
Inertial reference systems. Newton laws and their applications. Contact Forces: static and kinetic friction,
velocity dependent drag forces.
Non inertial reference systems and fictitious forces.
Work done by a force, kinetic energy, work-energy theorem, power.
Conservative forces and potential energy, conservation of mechanical energy. Conservation of total energy
of a system of particles in absence of external forces.
Brief introduction to Planetary motion, Kepler’s laws and Newton’s law of Gravitation.
Brief historical outline about first experimental evidence of electrostatic phenomena, charge and its
conservation, electrostatic forces, Coulomb’s law and electric field.
Definition of flux of a vector, electric field flux through a closed surface and Gauss’s law.
Use of Gauss’s law for electric field calculation in presence of highly symmetric charge distributions.
Electric potential energy and electric potential.
Capacitance and capacitors, electric current and resistance, Ohm’s law, electromotive force and direct
current circuits, Kirchoff’s laws, RC circuits.
Properties of conductors, conductivity, drift velocity, mobility, electric charge carriers random thermal
velocity, Maxwell distribution and temperature, diffusion and diffusion electric currents, 1st Fick’s Law,
Boltzmann energy distribution.
Outline on atomic structure and discrete energy levels, Planck’s constant, energy bands in in solids.
Outline on molecular structure and covalent bond theory, electrons and holes in semiconductors,
semiconductor doping, Fermi-Dirac distribution, electron and states densities in semiconductors, p-type
and n-type semiconductors.
Semiconductors in equilibrium, combined current equations, Einstein relation, Equilibrium band diagrams.
Non-equilibrium semiconductors, direct and indirect recombination, minority carrier decay in time,
minority carrier decay in space, surface recombination.
p-n junction diode, energy bands diagrams in case of direct and reverse polarization, built-in potential,
minority carrier injection, diode law, drift and diffusion currents in the diode, depletion region, reverse bias
Diode small signal response, junction capacitance, diffusion capacitance, real diode I/V characteristic.
Mentions about a MOS structure and its capacitance.
Field Effect Transistor (FET/JFET), pinch-off and current saturation, mentions about MOSFET.




Mario Sannino

Teaching style

In presence

Lesson timetable

Monday: 11:00 - 13:00, room 710 dal 29 febbraio
Tuesday: 14:00 - 16:00, room 710
Wednesday: 9:00 - 11:00, room 710



Course hour allocation

This course consists of 72 hours of lectures.